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Dual Resistive Switching Performance Derived from Ionic Migration in Halide Perovskite Based Memory

Authors :
Kaijin Kang
Wen Niu
Yanming Zhang
Anlin Li
Xingze Zou
Wei Hu
Source :
The Journal of Physical Chemistry Letters. 14:347-353
Publication Year :
2023
Publisher :
American Chemical Society (ACS), 2023.

Abstract

Herein, we report an environmentally stable and friendly halide perovskite based resistive random access memory device with an Ag/PMMA/(PMA)

Subjects

Subjects :
General Materials Science
Physical and Theoretical Chemistry

Details

ISSN :
19487185
Volume :
14
Database :
OpenAIRE
Journal :
The Journal of Physical Chemistry Letters
Accession number :
edsair.doi.dedup.....74923f9683049b7a3f5aaada5e21a86b
Full Text :
https://doi.org/10.1021/acs.jpclett.2c03676
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