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Vacancy-hydrogen complexes in ammonothermal GaN
- Source :
- Journal of crystal growth. 403:114-118
- Publication Year :
- 2014
-
Abstract
- We have applied positron annihilation spectroscopy to study in-grown vacancy defects in bulk GaN crystals grown by the ammonothermal method. We observe a high concentration of Ga vacancy related defects in n-type samples with varying free electron and oxygen content. The positron lifetimes found in these samples suggest that the Ga vacancies are complexed with hydrogen impurities. The number of hydrogen atoms in each vacancy decreases with increasing free electron concentration and oxygen and hydrogen content. The local vibrational modes observed in infrared absorption support this conclusion.
- Subjects :
- Materials science
Hydrogen
ta221
chemistry.chemical_element
Infrared spectroscopy
vacancy
Oxygen
Positron annihilation spectroscopy
GaN
Inorganic Chemistry
Condensed Matter::Materials Science
Positron
Impurity
Vacancy defect
Physics::Atomic and Molecular Clusters
Materials Chemistry
ta218
ta214
ta114
ammonothermal
Condensed Matter Physics
Crystallography
chemistry
Molecular vibration
hydrogen
Physical chemistry
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 403
- Database :
- OpenAIRE
- Journal :
- Journal of crystal growth
- Accession number :
- edsair.doi.dedup.....7262577bf04fa251658bfcbd5002090a