Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology

This letter presents first-ever fabricated GaN split-current magnetic sensor device. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 % T−1 for wide mT range of the magnetic field. Constant sensitivity of a fabricated sensor can be attributed to device’s 2DEG nature, i.e., its high electron concentration and mobility, and very small layer thickness.