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Cross-Section Doping Topography of 4H-SiC VJFETs by Various Techniques
- Source :
- International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), Sep 2017, Washington, DC, United States. ⟨10.4028/www.scientific.net/MSF.924.653⟩
- Publication Year :
- 2018
- Publisher :
- Trans Tech Publications, Ltd., 2018.
-
Abstract
- International audience; Different methods for cross-section doping topography of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the doping distribution in the epitaxial structure and the implanted areas.
- Subjects :
- Materials science
02 engineering and technology
TSI-VJFET
Epitaxy
01 natural sciences
Cross section (physics)
chemistry.chemical_compound
0103 physical sciences
Silicon carbide
General Materials Science
SSRM
010302 applied physics
Silicon Carbide
business.industry
Mechanical Engineering
Doping
021001 nanoscience & nanotechnology
Condensed Matter Physics
[SPI.TRON]Engineering Sciences [physics]/Electronics
SCM
chemistry
Mechanics of Materials
SEM
Optoelectronics
Field-effect transistor
0210 nano-technology
business
SIMS
Subjects
Details
- ISSN :
- 16629752
- Volume :
- 924
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum
- Accession number :
- edsair.doi.dedup.....71c0eee0e03cbc42cb83fcb8a93952e8
- Full Text :
- https://doi.org/10.4028/www.scientific.net/msf.924.653