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High Field Phenomena of Qubits

Authors :
Mary Ellen Zvanut
Christoph Boehme
Dane R. McCamey
J. van Tol
Gavin W. Morley
Susumu Takahashi
Source :
Tol, Johan; Morley, G. W.; Takahashi, S.; McCamey, D. R.; Boehme, C.; & Zvanut, M. E.(2009). High-Field Phenomena of Qubits. Applied Magnetic Resonance, 36(2), pp 259-268. doi: 10.1007/s00723-009-0014-6. Retrieved from: http://www.escholarship.org/uc/item/1851d7f4, Applied Magnetic Resonance
Publication Year :
2009

Abstract

Electron and nuclear spins are very promising candidates to serve as quantum bits (qubits) for proposed quantum computers, as the spin degrees of freedom are relatively isolated from their surroundings, and can be coherently manipulated e.g. through pulsed EPR and NMR. For solid state spin systems, impurities in crystals based on carbon and silicon in various forms have been suggested as qubits, and very long relaxation rates have been observed in such systems. We have investigated a variety of these systems at high magnetic fields in our multi-frequency pulsed EPR/ENDOR spectrometer. A high magnetic field leads to large electron spin polarizations at helium temperatures giving rise to various phenomena that are of interest with respect to quantum computing. For example, it allows the initialization of the both the electron spin as well as hyperfine-coupled nuclear spins in a well defined state by combining millimeter and RF radiation; it can increase the T2 relaxation times by eliminating decoherence due to dipolar interaction; and it can lead to new mechanisms for the coherent electrical readout of electron spins. We will show some examples of these and other effects in Si:P, SiC:N, and nitrogen-related centers in diamond.<br />13 pages, 5 figures. Confererence Proceedings of the 6th Asia-Pacific ESR/EPR Society Conference in Cairns, Australia (2008)

Details

Language :
English
Database :
OpenAIRE
Journal :
Tol, Johan; Morley, G. W.; Takahashi, S.; McCamey, D. R.; Boehme, C.; & Zvanut, M. E.(2009). High-Field Phenomena of Qubits. Applied Magnetic Resonance, 36(2), pp 259-268. doi: 10.1007/s00723-009-0014-6. Retrieved from: http://www.escholarship.org/uc/item/1851d7f4, Applied Magnetic Resonance
Accession number :
edsair.doi.dedup.....712058082e2831ed94a98c45597794ed
Full Text :
https://doi.org/10.1007/s00723-009-0014-6.