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High Pressure Processing of Ion Implanted GaN
- Source :
- Electronics, Vol 9, Iss 1380, p 1380 (2020)
- Publication Year :
- 2020
- Publisher :
- MDPI AG, 2020.
-
Abstract
- It is well known that ion implantation is one of the basic tools for semiconductor device fabrication. The implantation process itself damages, however, the crystallographic lattice of the semiconductor. Such damage can be removed by proper post-implantation annealing of the implanted material. Annealing also allows electrical activation of the dopant and creates areas of different electrical types in a semiconductor. However, such thermal treatment is particularly challenging in the case of gallium nitride since it decomposes at relatively low temperature (~800 °C) at atmospheric pressure. In order to remove the implantation damage in a GaN crystal structure, as well as activate the implanted dopants at ultra-high pressure, annealing process is proposed. It will be described in detail in this paper. P-type GaN implanted with magnesium will be briefly discussed. A possibility to analyze diffusion of any dopant in GaN will be proposed and demonstrated on the example of beryllium.
- Subjects :
- Materials science
Computer Networks and Communications
Annealing (metallurgy)
chemistry.chemical_element
lcsh:TK7800-8360
Gallium nitride
02 engineering and technology
Thermal treatment
01 natural sciences
chemistry.chemical_compound
thermodynamics
0103 physical sciences
diffusion coefficients
ion implantation
Electrical and Electronic Engineering
ultra-high-pressure annealing
010302 applied physics
Atmospheric pressure
Dopant
business.industry
diffusion
lcsh:Electronics
021001 nanoscience & nanotechnology
Ion implantation
Semiconductor
chemistry
Hardware and Architecture
Control and Systems Engineering
Signal Processing
Optoelectronics
Beryllium
0210 nano-technology
business
gallium nitride
Subjects
Details
- Language :
- English
- ISSN :
- 20799292
- Volume :
- 9
- Issue :
- 1380
- Database :
- OpenAIRE
- Journal :
- Electronics
- Accession number :
- edsair.doi.dedup.....6f6971f9d606f84a18b88c3e3404c211