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Millimeter-wave power InP HEMTs: challenges and prospects

Authors :
Del Alamo, J. A.
Somerville, M. H.
Blanchard, R. R.
Source :
del Alamo, J. A. ; Somerville, M. H. ; Blanchard, R. R. (1998) Millimeter-wave power InP HEMTs: challenges and prospects. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
Publication Year :
1998

Abstract

At this time, GaAs PHEMTs exhibit higher power output than InP HEMTs at 60 and 94 GHz. InP HEMTs, however, feature power-added efficiency values that exceed GaAs PHEMTs by about 5 to 20 percentage points at 94 GHz. As a consequence, InP HEMTs remain a superior candidate for millimeter-wave power applications. The reason for the inferior output power of InP HEMTs lies in their relatively small on-state and off-state breakdown voltages. This paper reviews the state of the art of millimeter-wave power HEMT technology as well as recent advances in understanding of breakdown phenomena. It also discusses the prospects and challenges facing InP HEMTs in performance, reliability and low-cost manufacturing.

Subjects

Subjects :
ING-INF/01 Elettronica

Details

Language :
Italian
Database :
OpenAIRE
Journal :
del Alamo, J. A. ; Somerville, M. H. ; Blanchard, R. R. (1998) Millimeter-wave power InP HEMTs: challenges and prospects. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.
Accession number :
edsair.doi.dedup.....6e020cfd81c225e924d039c37e5aeea2