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Hot carrier degradation mechanisms of short-channel FDSOI n-MOSFETs

Authors :
T.A. Karatsori
Sebastien Haendler
Christoforos G. Theodorou
C.A. Dimitriadis
Gerard Ghibaudo
Nicolas Planes
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
Aristotle University of Thessaloniki, Department of Physics
STMicroelectronics [Crolles] (ST-CROLLES)
ARISTEIA II(Project 4154 of the GreekGeneral Secretariat for Research and Technology, co-funded by theEuropean Social Fund and national funds)
Source :
2015 DRC Proceedings, 2015 73rd Annual Device Research Conference (DRC), 2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.163-164, ⟨10.1109/DRC.2015.7175607⟩
Publication Year :
2015
Publisher :
HAL CCSD, 2015.

Abstract

session poster; International audience; The HC degradation of nanoscale FD-SOI n-MOSFETs has been investigated under the worst bias stress conditions (Vds,stress = Vgs,stress). At high stress voltages the hot carriers injected into the gate dielectric are the main degradation mechanism, superseding the interface degradation. The proposed degradation mechanisms are supported with the interface and gate dielectric trap properties extracted from LFN measurements.

Details

Language :
English
Database :
OpenAIRE
Journal :
2015 DRC Proceedings, 2015 73rd Annual Device Research Conference (DRC), 2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.163-164, ⟨10.1109/DRC.2015.7175607⟩
Accession number :
edsair.doi.dedup.....6df20e64e81d7e224227100e52fccd5d
Full Text :
https://doi.org/10.1109/DRC.2015.7175607⟩