Back to Search
Start Over
Hot carrier degradation mechanisms of short-channel FDSOI n-MOSFETs
- Source :
- 2015 DRC Proceedings, 2015 73rd Annual Device Research Conference (DRC), 2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.163-164, ⟨10.1109/DRC.2015.7175607⟩
- Publication Year :
- 2015
- Publisher :
- HAL CCSD, 2015.
-
Abstract
- session poster; International audience; The HC degradation of nanoscale FD-SOI n-MOSFETs has been investigated under the worst bias stress conditions (Vds,stress = Vgs,stress). At high stress voltages the hot carriers injected into the gate dielectric are the main degradation mechanism, superseding the interface degradation. The proposed degradation mechanisms are supported with the interface and gate dielectric trap properties extracted from LFN measurements.
- Subjects :
- Materials science
business.industry
020208 electrical & electronic engineering
Gate dielectric
Electrical engineering
020206 networking & telecommunications
02 engineering and technology
Dielectric
[SPI.TRON]Engineering Sciences [physics]/Electronics
Stress (mechanics)
Logic gate
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
Degradation (geology)
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
business
AND gate
Communication channel
Voltage
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- 2015 DRC Proceedings, 2015 73rd Annual Device Research Conference (DRC), 2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.163-164, ⟨10.1109/DRC.2015.7175607⟩
- Accession number :
- edsair.doi.dedup.....6df20e64e81d7e224227100e52fccd5d
- Full Text :
- https://doi.org/10.1109/DRC.2015.7175607⟩