Experimental time evolution study of the HfO2-based IMPLY gate operation

In the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a potential powerful basis for logic applications. In the literature, the IMPLY operation has been widely simulated, but most of the efforts have been just focused on accomplishing its truth table, only considering the initial and final states of the gate. However, a complete understanding of the time evolution between states is still missing and barely reported yet. In this paper, the time evolution of the memristors involved in an IMPLY gate are studied in detail for every case of the gate. Furthermore, the impact on IMPLY gate operation of the internal resistor connected in series with the memristors of the IMPLY gate is included.