Back to Search
Start Over
Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition
- Source :
- CrystEngComm (Camb., Online) 18 (2016): 2770–2779. doi:10.1039/c6ce00280c, info:cnr-pdr/source/autori:Bosi, M.; Attolini, G.; Negri, M.; Ferrari, C.; Buffagni, E.; Frigeri, C.; Calicchio, M.; Pecz, B.; Riesz, F.; Cora, I.; Osvath, Z.; Jiang, L.; Borionetti, G./titolo:Defect structure and strain reduction of 3C-SiC%2FSi layers obtained with the use of a buffer layer and methyltrichlorosilane addition/doi:10.1039%2Fc6ce00280c/rivista:CrystEngComm (Camb., Online)/anno:2016/pagina_da:2770/pagina_a:2779/intervallo_pagine:2770–2779/volume:18
- Publication Year :
- 2016
- Publisher :
- Royal Society of Chemistry, London , Regno Unito, 2016.
-
Abstract
- 3C-SiC layers were deposited on Si substrates by using a low temperature buffer layer and the addition of methyltrichlorosilane (MTS) to the gas phase during the high temperature thick film growth. Several samples were grown by varying the deposition temperature and the MTS content in order to study how these parameters affect the layer quality and the lattice defects. All of the grown layers are single crystalline and epitaxial to the substrate. The formation of empty voids at the SiC/Si interface was successfully avoided. The surface of the layers grown with MTS addition was smoother and contained less residual strain. A 15 mu m thick 3C-SiC sample was grown using an optimized process in order to evaluate its residual strain and bow.
- Subjects :
- SiC
defect
Materials science
growth
02 engineering and technology
Substrate (electronics)
Epitaxy
01 natural sciences
Buffer (optical fiber)
Deposition temperature
chemistry.chemical_compound
stomatognathic system
0103 physical sciences
General Materials Science
Composite material
010302 applied physics
Strain (chemistry)
epitaxy
General Chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
material science
Methyltrichlorosilane
chemistry
Lattice defects
0210 nano-technology
Layer (electronics)
optimization
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- CrystEngComm (Camb., Online) 18 (2016): 2770–2779. doi:10.1039/c6ce00280c, info:cnr-pdr/source/autori:Bosi, M.; Attolini, G.; Negri, M.; Ferrari, C.; Buffagni, E.; Frigeri, C.; Calicchio, M.; Pecz, B.; Riesz, F.; Cora, I.; Osvath, Z.; Jiang, L.; Borionetti, G./titolo:Defect structure and strain reduction of 3C-SiC%2FSi layers obtained with the use of a buffer layer and methyltrichlorosilane addition/doi:10.1039%2Fc6ce00280c/rivista:CrystEngComm (Camb., Online)/anno:2016/pagina_da:2770/pagina_a:2779/intervallo_pagine:2770–2779/volume:18
- Accession number :
- edsair.doi.dedup.....6af02ce1b9284f8f35550cb999277eeb