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The role of permanent and induced electrostatic dipole moments for Schottky barriers in Janus MXY/graphene heterostructures: a first-principles study
- Source :
- Dalton transactions (Cambridge, England : 2003). 51(25)
- Publication Year :
- 2022
-
Abstract
- The Schottky barrier height (ESBH) is a crucial factor in determining the transport properties of semiconductor materials and it directly regulates the carrier mobility in opto-electronics devices.
- Subjects :
- Inorganic Chemistry
Subjects
Details
- ISSN :
- 14779234
- Volume :
- 51
- Issue :
- 25
- Database :
- OpenAIRE
- Journal :
- Dalton transactions (Cambridge, England : 2003)
- Accession number :
- edsair.doi.dedup.....69d7035f8e708a8dd444e262a7df53e1