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Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene
- Source :
- Nano letters. 11(9)
- Publication Year :
- 2011
-
Abstract
- We explore the effect of high-κ dielectric seed layer and overlayer on carrier transport in epitaxial graphene. We introduce a novel seeding technique for depositing dielectrics by atomic layer deposition that utilizes direct deposition of high-κ seed layers and can lead to an increase in Hall mobility up to 70% from as-grown. Additionally, high-κ seeded dielectrics are shown to produce superior transistor performance relative to low-κ seeded dielectrics and the presence of heterogeneous seed/overlayer structures is found to be detrimental to transistor performance, reducing effective mobility by 30-40%. The direct deposition of high-purity oxide seed represents the first robust method for the deposition of uniform atomic layer deposited dielectrics on epitaxial graphene that improves carrier transport.
Details
- ISSN :
- 15306992
- Volume :
- 11
- Issue :
- 9
- Database :
- OpenAIRE
- Journal :
- Nano letters
- Accession number :
- edsair.doi.dedup.....69a051db254939846ad96f7e5d8e48f7