Simulation of Domain Growth in a System with Random Impurities

Domain growth in a system with random impurities for both conserved and nonconserved order parameter is investigated by means of the cell-dynamical system (CDS) method. We find the following. (i) The characteristic length in domain growth obeys l ( t )∼(log t ) α where α is smaller than the value predicted by Huse and Henley [Phys. Rev. Lett. 55 (1985) 2708]. (ii) The exponent α seems to depend on the impurity concentration and temperature. (iii) Dynamical scaling of the structure factor is satisfied and the form of the scaling function depends on the impurity concentration.