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Hexagonal Boron Nitride Synthesized at Atmospheric Pressure Using Metal Alloy Solvents: Evaluation as a Substrate for 2D Materials
- Source :
- Nano letters. 20(1)
- Publication Year :
- 2019
-
Abstract
- Hexagonal boron nitride (h-BN) synthesized under high pressure and high temperature (HPHT) has been used worldwide in two-dimensional (2D) materials research as an essential material for constructing van der Waals heterostructures. Here, we study h-BN synthesized with another method, i.e., via synthesis at atmospheric pressure and high temperature (APHT) using a metal alloy solvent. First, we examine the APHT h-BN in a bulk crystal form using cathodoluminescence and find that it does not have carbon-rich domains that inevitably exist in a core region of all the HPHT h-BN crystals. Next, we statistically compare the size of the crystal flakes exfoliated on a SiO2/Si substrate from APHT and HPHT h-BN crystals by employing our automated 2D material searching system. Finally, we provide direct evidence that APHT h-BN can serve as a high-quality substrate for 2D materials by demonstrating high carrier mobility, ballistic transport, and Hofstadter butterfly in graphene and photoluminescence in WS2.
- Subjects :
- Electron mobility
Materials science
Photoluminescence
Atmospheric pressure
Graphene
Mechanical Engineering
Alloy
Bioengineering
Cathodoluminescence
02 engineering and technology
General Chemistry
Substrate (electronics)
engineering.material
021001 nanoscience & nanotechnology
Condensed Matter Physics
law.invention
Crystal
Chemical engineering
law
engineering
General Materials Science
0210 nano-technology
Subjects
Details
- ISSN :
- 15306992
- Volume :
- 20
- Issue :
- 1
- Database :
- OpenAIRE
- Journal :
- Nano letters
- Accession number :
- edsair.doi.dedup.....69125d3a96b80b45349f2a3bde507017