Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack

MLA

V V Sharkov, et al. Noise-Induced Resistive Switching in a Memristor Based on ZrO2(Y)/Ta2O5 Stack. Jan. 2019. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....68374b734c0b3f9212fe3ddde3ca627c&authtype=sso&custid=ns315887.

APA

V V Sharkov, Bernardo Spagnolo, M. N. Koryazhkina, Dmitry Filatov, Alexey Belov, Ivan Antonov, A. S. Novikov, O. N. Gorshkov, Alexey Mikhaylov, Angelo Carollo, D V Vrzheshch, O V Tabakov, & Alexander A. Dubkov. (2019). Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack.

Chicago

V V Sharkov, Bernardo Spagnolo, M. N. Koryazhkina, Dmitry Filatov, Alexey Belov, Ivan Antonov, A. S. Novikov, et al. 2019. “Noise-Induced Resistive Switching in a Memristor Based on ZrO2(Y)/Ta2O5 Stack,” January. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi.dedup.....68374b734c0b3f9212fe3ddde3ca627c&authtype=sso&custid=ns315887.