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High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector
- Publication Year :
- 2017
-
Abstract
- In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin film was grown by plasma-assisted MBE on c-plane sapphire substrates. MSM devices fabricated with Ni/Au contacts in an interdigitated geometry were found to exhibit peak SR > 1.5 A/W at 236-240 nm at a bias of 4 V with a UV to visible rejection ratio > 105. The devices exhibited very low dark current < 10 nA at 20 V and showed no persistent photoconductivity (PPC) as evident from the sharp transients with a photo-to-dark current ratio > 103. These results represent the state-of-art performance for MBE-grown \b{eta}-Ga2O3 MSM solar blind detector.
- Subjects :
- 010302 applied physics
Physics
Physics and Astronomy (miscellaneous)
Condensed Matter - Mesoscale and Nanoscale Physics
business.industry
Detector
Photodetector
FOS: Physical sciences
02 engineering and technology
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
Responsivity
0103 physical sciences
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Sapphire
Optoelectronics
Thin film
0210 nano-technology
business
Dark current
Molecular beam epitaxy
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....6667ca278fca6076805f78f8bad0736b