On the Influence of Fin Corner Rounding in 3D Nanocrystal Flash Memories

Authors :: C. Jahan
P. Scheiblin
G. Reimbold
B. De Salvo
L. Perniola
Gerard Ghibaudo
Fabien Boulanger
Etienne Nowak
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
Domenget, Chahla
Source :: 23rd IEEE NVSMW / 3rd ICMTD '08, Club Méditerranée, Opio, FRANCE, 23rd IEEE NVSMW / 3rd ICMTD '08, Club Méditerranée, Opio, FRANCE, May 2008, Opio, France, HAL
Publication Year :: 2008
Publisher :: HAL CCSD, 2008.
Abstract: This work presents an original semi-analytical model capable to predict the electrical behavior of nanocrystal (NCs) trigate Fin-FET structures programmed under uniform tunneling (NAND scheme). Experimental data from memory devices with different gate stacks are quantitatively fitted, confirming the efficiency of our model. This model allows for a quantitative understanding of the influence of the FinFET geometrical variations on memory performances. The impact of the fin corner rounding appears to be the most critical feature in such 3D structures.

Language :: English
Database :: OpenAIRE
Journal :: 23rd IEEE NVSMW / 3rd ICMTD '08, Club Méditerranée, Opio, FRANCE, 23rd IEEE NVSMW / 3rd ICMTD '08, Club Méditerranée, Opio, FRANCE, May 2008, Opio, France, HAL
Accession number :: edsair.doi.dedup.....6642cbce5b60bb8f6da257fe1f354636

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