1.5×10−9 Ωcm2 Contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation

© 2015 IEEE. Record-low contact resistivity (pc) for n-Si, down to 1.5×10-9 Q-cm2, is achieved on Si:P epitaxial layer. We confirm that Ti silicidation reduces the pc for n-Si, while an additional Ge pre-amorphization implantation (PAI) before Ti silicidation further extends the pc reduction. In situ doped Si:P with P concentration of 2×1021 cm-3 is used as the substrate, and dynamic surface anneal (DSA) boosts P activation. In addition, TiOx based metal-insulator-semiconductor (MIS) contact is also studied on Si:P but is found to suffer from low thermal stability. ispartof: pages:592-595 ispartof: IEEE International Electron Devices Meeting - IEDM vol:2016-February pages:592-595 ispartof: IEEE International Electron Devices Meeting - IEDM location:Washington, D.C. USA date:7 Dec - 9 Dec 2015 status: published