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4H-SiC(0001) Surface Faceting during Interaction with Liquid Si
- Source :
- Materials Science Forum, Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.163-166. ⟨10.4028/www.scientific.net/MSF.858.163⟩, Materials Science Forum, 858, Silicon Carbide and Related Materials 2015
- Publication Year :
- 2016
- Publisher :
- HAL CCSD, 2016.
-
Abstract
- The aim of this study was to find conditions allowing the "natural" formation of a regular and controllable step bunched morphology on a 4H-SiC seed without the need of any SiC deposition. This was performed by melting a bulk piece of Si on a 4°off 4H seed in the temperature range of 1500 - 1600°C, for 15 min. After etching the remaining Si, the 4H surface was found to be successfully highly step bunched with steps very parallel and regular. A mechanism of dissolution-precipitation was proposed, which could occur both on a short (step to step) and long (centre to periphery) range. This process is kinetically limited at low temperature (1500-1550°C) and considered to be close to the equilibrium at 1600°C.<br />Materials Science Forum, 858<br />ISSN:0255-5476<br />ISSN:1662-9752<br />Silicon Carbide and Related Materials 2015<br />ISBN:978-3-0357-1042-7<br />ISBN:3-0357-1042-2
- Subjects :
- Surface (mathematics)
Faceting
Morphology (linguistics)
Materials science
Liquid silicon
02 engineering and technology
01 natural sciences
CVD
Steps
Etching (microfabrication)
0103 physical sciences
[CHIM.CRIS]Chemical Sciences/Cristallography
Deposition (phase transition)
[CHIM]Chemical Sciences
General Materials Science
010302 applied physics
Range (particle radiation)
Mechanical Engineering
[CHIM.MATE]Chemical Sciences/Material chemistry
Atmospheric temperature range
021001 nanoscience & nanotechnology
Condensed Matter Physics
Crystallography
Mechanics of Materials
Chemical physics
Liquid Silicon
0210 nano-technology
Subjects
Details
- Language :
- English
- ISBN :
- 978-3-0357-1042-7
3-0357-1042-2 - ISSN :
- 02555476, 16629752, and 16629760
- ISBNs :
- 9783035710427 and 3035710422
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum, Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.163-166. ⟨10.4028/www.scientific.net/MSF.858.163⟩, Materials Science Forum, 858, Silicon Carbide and Related Materials 2015
- Accession number :
- edsair.doi.dedup.....65cdf2380a27c0b5545c635e33c26648