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High-efficiency deflection of high energy protons due to channeling along the (110) axis of a bent silicon crystal

Authors :
A.S. Denisov
Vincenzo Guidi
A. Stocchi
L. Burmistrov
Gianluigi Arduini
A. Masi
Roberto Rossi
F. Murtas
D. Breton
W. Scandale
S. Montesano
F. Cerutti
M. Garattini
Thomas James
Vyacheslav V. Skorobogatov
F. Addesa
F. Galluccio
Mark Butcher
Francesco Iacoangeli
Yu. A. Chesnokov
S. Dubos
George Smirnov
V. Puill
A. Lechner
L.G. Malyarenko
Laura Bandiera
Alexander Kovalenko
Daniele Mirarchi
Alexander M. Taratin
L.P. Lapina
Simone Gilardoni
A. G. Afonin
Mark Pesaresi
Andrea Mazzolari
G. Germogli
Sultan B. Dabagov
Yu.E. Sandomirskiy
V. A. Maisheev
Geoffrey Hall
A. A. Durum
V. Chaumat
J. Maalmi
A. A. Yanovich
Stefano Redaelli
Yury A. Gavrikov
Michel Raymond
Yury Ivanov
G. Cavoto
Enrico Bagli
Laboratoire de l'Accélérateur Linéaire (LAL)
Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)
Source :
Physics Letters B, Physics Letters B, Vol 760, Iss C, Pp 826-831 (2016), Phys.Lett.B, Phys.Lett.B, 2016, 760, pp.826-831. ⟨10.1016/j.physletb.2016.07.072⟩, Physics Letters B, Elsevier, 2016, 760, pp.826-831. ⟨10.1016/j.physletb.2016.07.072⟩
Publication Year :
2016
Publisher :
Elsevier, 2016.

Abstract

A deflection efficiency of about 61 % was observed for 400 GeV/c protons due to channeling, most strongly along the 〈110〉 axis of a bent silicon crystal. It is comparable with the deflection efficiency in planar channeling and considerably larger than in the case of the 〈111〉 axis. The measured probability of inelastic nuclear interactions of protons in channeling along the 〈110〉 axis is only about 10 % of its amorphous level whereas in channeling along the (110) planes it is about 25 % . High efficiency deflection and small beam losses make this axial orientation of a silicon crystal a useful tool for the beam steering of high energy charged particles.

Details

ISSN :
03702693
Database :
OpenAIRE
Journal :
Physics Letters B, Physics Letters B, Vol 760, Iss C, Pp 826-831 (2016), Phys.Lett.B, Phys.Lett.B, 2016, 760, pp.826-831. ⟨10.1016/j.physletb.2016.07.072⟩, Physics Letters B, Elsevier, 2016, 760, pp.826-831. ⟨10.1016/j.physletb.2016.07.072⟩
Accession number :
edsair.doi.dedup.....644585b18d224cf8c5f97db6ab9fa291