Back to Search
Start Over
Graphene-HfO2-based resistive RAM memories
- Source :
- Microelectronic Engineering, Microelectronic Engineering, 2016, 161, pp.82-86. ⟨10.1016/j.mee.2016.04.009⟩, Microelectronic Engineering, Elsevier, 2016, 161, pp.82-86. ⟨10.1016/j.mee.2016.04.009⟩
- Publication Year :
- 2016
- Publisher :
- HAL CCSD, 2016.
-
Abstract
- International audience; Graphene, a two dimensional material with remarkable electronic properties, has attracted a huge interest among scientist during the last decade. We report the fabrication of Graphene-HfO2-based resistive RAM memories. We insert graphene layers between the oxide layer and the gold top electrode resulting in stabilization of a low resistance state stability without applied voltage, contrary to behaviour observed for identical graphene free memory devices. Graphene here is used as an oxygen reservoir and contribute to the switching mechanism. (C) 2016 Elsevier B.V. All rights reserved.
- Subjects :
- Fabrication
Materials science
Oxide
Nanotechnology
02 engineering and technology
01 natural sciences
law.invention
chemistry.chemical_compound
law
0103 physical sciences
Electrical and Electronic Engineering
Electronic properties
[PHYS]Physics [physics]
010302 applied physics
Graphene
[CHIM.MATE]Chemical Sciences/Material chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Resistive random-access memory
chemistry
Electrode
0210 nano-technology
Layer (electronics)
Voltage
Subjects
Details
- Language :
- English
- ISSN :
- 01679317 and 18735568
- Database :
- OpenAIRE
- Journal :
- Microelectronic Engineering, Microelectronic Engineering, 2016, 161, pp.82-86. ⟨10.1016/j.mee.2016.04.009⟩, Microelectronic Engineering, Elsevier, 2016, 161, pp.82-86. ⟨10.1016/j.mee.2016.04.009⟩
- Accession number :
- edsair.doi.dedup.....639048c5ae483e9338f96d7eb1187cb6