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Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
- Source :
- International Journal of Microwave and Wireless Technologies. 10:666-673
- Publication Year :
- 2018
- Publisher :
- Cambridge University Press (CUP), 2018.
-
Abstract
- We present a novel bonding process for gallium nitride-based electronic devices on diamond heat spreaders. In the proposed technology, GaN devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and SCD heat spreaders at 3 GHz and 50 V drain bias show comparable power-added-efficiency and output power (Pout) levels. A thermal analysis of the hybrids was performed by comparison of 2 × 1mm2AlGaN/GaN Schottky diodes on Si, PCD, and SCD, which exhibit a homogeneous field in the channel in contrast to gated transistors. Significantly different currents are observed due to the temperature dependent mobility in the 2DEG channel. These measurements are supported by a 3D thermal finite element analysis, which suggests a large impact of our transfer technique on the thermal resistance of these devices. In summary, we show a promising new GaN-on-diamond technology for future high-power, microwave GaN device applications.
- Subjects :
- Materials science
Silicon
power amplifier
Thermal resistance
chemistry.chemical_element
Algan gan
Gallium nitride
semiconductor devices and IC-technologies
02 engineering and technology
engineering.material
01 natural sciences
law.invention
symbols.namesake
chemistry.chemical_compound
law
0103 physical sciences
Electrical and Electronic Engineering
Thermal analysis
Bonding process
010302 applied physics
business.industry
Transistor
Diamond
Schottky diode
GaN-on-Diamond
021001 nanoscience & nanotechnology
chemistry
engineering
symbols
Optoelectronics
van der Waals force
0210 nano-technology
business
Microwave
Subjects
Details
- ISSN :
- 17590795 and 17590787
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- International Journal of Microwave and Wireless Technologies
- Accession number :
- edsair.doi.dedup.....634d70af90163ecbd15bfbcb3c9bb4c0