Room temperature ferroelectric properties of SrBi2Ta2O9- and (Bi, La)4Ti3O12-incorporated BiFeO3 thin films

SrBi2Ta2O9 (5%)- and (Bi, La)4Ti3O12 (5%)-incorporated BiFeO3 thin films were fabricated by chemical solution deposition on Pt/Ti/SiO2/Si (100) structures. The mixed composition films showed lower leakage current density at high electric fields than pure BFO films. Because of the low leakage current density in the mixed films, polarization hysteresis loops with the remanent polarization of 80 μC/cm2 and 40 μC/cm2 were obtained at 1 kHz frequency in SBT- and BLT-incorporated films, respectively.