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Apparent size effects on dopant activation in nanometer-wide Si fins
- Source :
- Folkersma, S, Bogdanowicz, J, Favia, P, Wouters, L, Petersen, D H, Hansen, O, Henrichsen, H H, Nielsen, P F, Shiv, L & Vandervorst, W 2021, ' Apparent size effects on dopant activation in nanometer-wide Si fins ', Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, vol. 39, no. 2, 023202 . https://doi.org/10.1116/6.0000921
- Publication Year :
- 2021
-
Abstract
- Due to the dramatic downscaling of device features in recent technology nodes, characterizing the electrical properties of these structures is becoming ever more challenging as it often requires metrology able to probe local variations in dopant and carrier concentration with high accuracy. As no existing technique is able to meet all requirements, a correlative metrology approach is generally considered a solution. In this article, we study size-dependent effects on the dopant activation in nanometer-wide Si fins using a novel correlative approach. We start by showing that the micro four-point probe technique can be used to precisely measure the resistance of B doped and (laser) annealed Si fins. Next, we use transmission electron microscopy and scanning spreading resistance microscopy to show that the observed width dependence of the apparent sheet resistance of these fins can be explained by either a partially or a fully inactive region forming along the top of the fin sidewalls according to the annealing conditions.
- Subjects :
- Fin
Materials science
Spreading resistance profiling
Dopant
business.industry
Annealing (metallurgy)
Process Chemistry and Technology
Dopant Activation
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Metrology
Microscopy
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Instrumentation
Sheet resistance
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Folkersma, S, Bogdanowicz, J, Favia, P, Wouters, L, Petersen, D H, Hansen, O, Henrichsen, H H, Nielsen, P F, Shiv, L & Vandervorst, W 2021, ' Apparent size effects on dopant activation in nanometer-wide Si fins ', Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, vol. 39, no. 2, 023202 . https://doi.org/10.1116/6.0000921
- Accession number :
- edsair.doi.dedup.....6259bca7c05a7e47effcaa30af30567e