Back to Search
Start Over
RF Performance of Devices Processed in Low-Temperature Sequential Integration
- Source :
- IEEE Transactions on Electron Devices, IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, pp.1-6. ⟨10.1109/TED.2021.3080669⟩, IEEE Transactions on Electron Devices, 2021, pp.1-6. ⟨10.1109/TED.2021.3080669⟩
- Publication Year :
- 2021
- Publisher :
- HAL CCSD, 2021.
-
Abstract
- RF performance and intertier coupling of CMOS processed in 3-D sequential integration are investigated. pMOS transistor fabricated with a 500 °C thermal budget features good RF figures of merit with ${f}_{t} =105$ GHz and ${f}_{\text {max}} =175$ GHz for a gate length of 45 nm and ${V}_{\text {DD}} = -1$ V. Moreover, we demonstrate that the low- ${k}$ SiCO oxide spacer and low polysilicon gate resistance obtained with the low temperature process contribute to ${f}_{\text {max}}$ results that are better than high temperature process (above 1000°). Finally, we illustrate the crosstalk effects and the influence of the low-tier transistor gate voltage ${V}_{\text {G}}$ on the top-tier threshold voltage ${V}_{T}$ . We also show that a polysilicon ground shield integrated under the top-tier transistor substantially attenuates the intertier RF field coupling effects.
- Subjects :
- 010302 applied physics
Coupling
Materials science
Transistor
01 natural sciences
7. Clean energy
Electronic, Optical and Magnetic Materials
law.invention
Threshold voltage
PMOS logic
[SPI.TRON]Engineering Sciences [physics]/Electronics
CMOS
law
Logic gate
0103 physical sciences
Figure of merit
Radio frequency
Electrical and Electronic Engineering
Atomic physics
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
ComputingMilieux_MISCELLANEOUS
[PHYS.PHYS.PHYS-DATA-AN]Physics [physics]/Physics [physics]/Data Analysis, Statistics and Probability [physics.data-an]
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices, IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, pp.1-6. ⟨10.1109/TED.2021.3080669⟩, IEEE Transactions on Electron Devices, 2021, pp.1-6. ⟨10.1109/TED.2021.3080669⟩
- Accession number :
- edsair.doi.dedup.....623ed3653c9c7d850202b6198472443c