Formation of Ni3InGaAs phase in Ni/InGaAs contact at low temperature

Authors :: Philippe Maugis
Fabrice Nemouchi
Khalid Hoummada
Philippe Rodriguez
Patrice Gergaud
C. Perrin
S. Zhiou
E. Ghegin
Dominique Mangelinck
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP)
Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)
Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)
Source :: Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2016, 109 (13), ⟨10.1063/1.4963132⟩, Applied Physics Letters, 2016, 109 (13), ⟨10.1063/1.4963132⟩
Publication Year :: 2016
Publisher :: HAL CCSD, 2016.
Abstract: International audience; The composition and morphology of the product phase after the reaction of Ni thin film with In0.53Ga0.47As substrate at 350 degrees C were investigated by atom probe tomography, X-ray diffraction, and scanning electron microscopy. Results show the formation of a unique Ni-3(In0.53Ga0.47) As phase with a low concentration in-depth gradient of Ni and the decoration of the grain boundaries by In atoms. These analyses indicate that Ni is the main diffusing specie during the growth of Ni-3(In0.53Ga0.47) As phase. The volume of the product phase is higher than the volume of the consumed Ni film as expected for the formation of Ni-3(In0.53Ga0.47) As phase. Published by AIP Publishing.

Language :: English
ISSN :: 00036951
Database :: OpenAIRE
Journal :: Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2016, 109 (13), ⟨10.1063/1.4963132⟩, Applied Physics Letters, 2016, 109 (13), ⟨10.1063/1.4963132⟩
Accession number :: edsair.doi.dedup.....61261e7d3a5bf5ec9355b4dd76d579a3
Full Text :: https://doi.org/10.1063/1.4963132⟩