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Engineering interfacial energy profile by changing the substrate terminating plane in perovskite heterointerfaces
- Source :
- Physical Review B, 93(11):115101. AMER PHYSICAL SOC, Physical review B: Condensed matter and materials physics, 93:115101. American Physical Society
- Publication Year :
- 2016
- Publisher :
- AMER PHYSICAL SOC, 2016.
-
Abstract
- Atomically engineered oxide heterointerfaces show a range of novel phenomena not present in their bulk form, thus providing an additional knob to tune the functional properties across such interfaces. Here we show that for an oxide Schottky interface between metallic SrRuO 3 and semiconducting Nb doped SrTiO 3 (Nb:STO) the terminating surface of the substrate plays a crucial role in determining the electronic transport across it. Interestingly this is achieved by engineering a monolayer of a charge-neutral SrO layer across the Schottky interface and not by the insertion of charged layers at the interface, as has been demonstrated earlier. These changes in the energy-band line-up across a symmetric interface indicate the presence of different polar characters at the SrO and TiO 2 terminations of the substrate. Owing to the presence of the same AO layer (SrO) in both SrRuO 3 and Nb:STO, we propose an intermixing of Ru and Ti ions across the interface for the SrO terminated Nb:STO substrate. First-principles density functional theory calculations on these systems conform with our experimental findings, and indicate a resultant shift in the interfacial atomic plane stacking of SrRuO 3 at the intermixed interface, leading to a modification of the electrostatic potential at the interface. The interdependence between the interfacial band alignment to the local atomic plane displacement across an intrinsically nonpolar oxide heterointerface is a key mechanism in realizing novel electronic properties in oxide based devices.
- Subjects :
- Materials science
Superlattice
Oxide
Nanotechnology
02 engineering and technology
Substrate (electronics)
01 natural sciences
chemistry.chemical_compound
ENHANCEMENT
0103 physical sciences
Monolayer
DEPOSITION
010306 general physics
Perovskite (structure)
SUPERLATTICES
ELECTRON-EMISSION MICROSCOPY
Schottky diode
OXIDE
021001 nanoscience & nanotechnology
Surface energy
TRANSPORT
chemistry
Chemical physics
0210 nano-technology
Layer (electronics)
TRANSITION
Subjects
Details
- Language :
- English
- ISSN :
- 1550235X, 01631829, 24699950, and 10980121
- Volume :
- 93
- Issue :
- 11
- Database :
- OpenAIRE
- Journal :
- Physical Review. B: Condensed Matter and Materials Physics
- Accession number :
- edsair.doi.dedup.....603c6055fc531b14cb870c673d336792