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Bound-exciton-induced current bistability in a silicon light-emitting diode
- Source :
- Applied Physics Letters 82, (2003)2823-25
- Publication Year :
- 2003
-
Abstract
- A bound-exciton-induced current bistability is observed under forward bias in an efficient silicon light-emitting diode at low temperatures. Two stable states of the S-type differential conductivity correspond to empty and filled states of bound excitons, respectively. The relationship between the current–voltage characteristic and the bound-exciton population can be accounted for using a rate equation model for bound and free excitons. The consistency between the theoretical and experimental results indicates that bound excitons, despite their neutral-charged states, contribute to the current bistability in silicon p–n junction diodes.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Silicon
Bistability
bistability
Exciton
Population
chemistry.chemical_element
Molecular physics
law.invention
electroluminescence
law
ddc:530
education
Diode
education.field_of_study
business.industry
Negative differential resistance
p-n diode
bound excitons
silicon
Rate equation
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
chemistry
Optoelectronics
Current (fluid)
business
Light-emitting diode
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters 82, (2003)2823-25
- Accession number :
- edsair.doi.dedup.....5f53c34e94caf0a0c0c10b4124471d9c