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Buffer layer influence on guiding properties of oxidized porous silicon waveguides
- Source :
- Physica E: Low-dimensional Systems and Nanostructures. 16:574-579
- Publication Year :
- 2003
- Publisher :
- Elsevier BV, 2003.
-
Abstract
- We studied the influence of the thickness and porosity of the buffer layer on the guiding properties of oxidized porous silicon waveguides (OPSWG). It is demonstrated how a modified anodization process acts on the porosity of the final oxidized porous silicon. In this way, it is possible to control the refractive index jump between the core of OPSWG made of compact silicon dioxide and the bottom buffer layer made of porous silicon dioxide. The adoption of a double-step anodization process decreases the propagation losses to 0.5 dB / cm against the 8 dB / cm measured for the waveguide realized using a single-step anodization. The main reason seems not to be the increase of the difference of refractive index values but the more homogeneous buffer layer obtained along the core of the waveguide. This homogeneous layer permits a better lateral confinement of the light as demonstrated by spatial refractive index profile measurement.
- Subjects :
- Materials science
optoelectronics
business.industry
Silicon dioxide
Refractive index profile
waveguides
Condensed Matter Physics
Porous silicon
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
law.invention
Core (optical fiber)
chemistry.chemical_compound
porous silicon
Optics
chemistry
law
Optoelectronics
Porosity
business
Waveguide
Layer (electronics)
Refractive index
Subjects
Details
- ISSN :
- 13869477
- Volume :
- 16
- Database :
- OpenAIRE
- Journal :
- Physica E: Low-dimensional Systems and Nanostructures
- Accession number :
- edsair.doi.dedup.....5f4fb1b3d98a8bf8b682edb0e10e9197