Structural and analytical characterization by scanning transmission electron microscopy of silicon-based nanostructures

Authors :: Roberto Balboni
Andrea Parisini
Aldo Armigliato
Source :: ECS transactions 10 (2007): 57–64. doi:10.1149/1.2773976, info:cnr-pdr/source/autori:Armigliato A, Balboni R, Parisini A/titolo:Structural and analytical characterization by scanning transmission electron microscopy of silicon-based nanostructures/doi:10.1149%2F1.2773976/rivista:ECS transactions/anno:2007/pagina_da:57/pagina_a:64/intervallo_pagine:57–64/volume:10
Publication Year :: 2007
Publisher :: The Electrochemical Society, Pennington, N.J. , Stati Uniti d'America, 2007.
Abstract: A few recent applications of scanning transmission electron microscopy (STEM) methods to problems of interest for nanoelectronics are reported. They include nanometer-scaled dopant profiles by Z-contrast and strain mapping by convergent beam diffraction.

Subjects :: Conventional transmission electron microscope
Nanostructure
Materials science
business.industry
Polymer characterization
Scanning confocal electron microscopy
Scanning Transmission Electron microscopy
Characterization (materials science)
Electron diffraction
Analytical characterizations
Scanning transmission electron microscopy
Scanning ion-conductance microscopy
Optoelectronics
Energy filtered transmission electron microscopy
Strain mapping
business
Dopant profiles

Language :: English
Database :: OpenAIRE
Journal :: ECS transactions 10 (2007): 57–64. doi:10.1149/1.2773976, info:cnr-pdr/source/autori:Armigliato A, Balboni R, Parisini A/titolo:Structural and analytical characterization by scanning transmission electron microscopy of silicon-based nanostructures/doi:10.1149%2F1.2773976/rivista:ECS transactions/anno:2007/pagina_da:57/pagina_a:64/intervallo_pagine:57–64/volume:10
Accession number :: edsair.doi.dedup.....5eb9c2c72cf75ae0d965f088ae446600
Full Text :: https://doi.org/10.1149/1.2773976

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