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Dual Passivation of Intrinsic Defects at the Compound Semiconductor/Oxide Interface Using an Oxidant and a Reductant
- Source :
- ACS Nano. 9:4843-4849
- Publication Year :
- 2015
- Publisher :
- American Chemical Society (ACS), 2015.
-
Abstract
- Studies have shown that metal oxide semiconductor field-effect transistors fabricated utilizing compound semiconductors as the channel are limited in their electrical performance. This is attributed to imperfections at the semiconductor/oxide interface which cause electronic trap states, resulting in inefficient modulation of the Fermi level. The physical origin of these states is still debated mainly because of the difficulty in assigning a particular electronic state to a specific physical defect. To gain insight into the exact source of the electronic trap states, density functional theory was employed to model the intrinsic physical defects on the InGaAs (2 × 4) surface and to model the effective passivation of these defects by utilizing both an oxidant and a reductant to eliminate metallic bonds and dangling-bond-induced strain at the interface. Scanning tunneling microscopy and spectroscopy were employed to experimentally determine the physical and electronic defects and to verify the effectiveness of dual passivation with an oxidant and a reductant. While subsurface chemisorption of oxidants on compound semiconductor substrates can be detrimental, it has been shown theoretically and experimentally that oxidants are critical to removing metallic defects at oxide/compound semiconductor interfaces present in nanoscale channels, oxides, and other nanostructures.
- Subjects :
- Materials science
Passivation
business.industry
Transistor
Fermi level
Inorganic chemistry
General Engineering
Oxide
General Physics and Astronomy
equipment and supplies
law.invention
Condensed Matter::Materials Science
symbols.namesake
chemistry.chemical_compound
Semiconductor
chemistry
law
symbols
Optoelectronics
General Materials Science
Density functional theory
Scanning tunneling microscope
business
Metallic bonding
Subjects
Details
- ISSN :
- 1936086X and 19360851
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- ACS Nano
- Accession number :
- edsair.doi.dedup.....5eaee809897050a5bdb1f7db6feb9d40