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Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots
- Source :
- Journal of Nanoparticle Research, Journal of Nanoparticle Research, Springer Verlag, 2011, 13 (1), pp.257-262. ⟨10.1007/s11051-010-0024-1⟩
- Publication Year :
- 2010
- Publisher :
- Springer Science and Business Media LLC, 2010.
-
Abstract
- Self-assembled InAs/GaAs (001) quantum dots (QDs) were grown by molecular beam epitaxy using ultra low-growth rate. A typical dot diameter of around 28 ± 2 nm and a typical height of 5 ± 1 nm are observed based on atomic force microscopy image. The photoluminescence (PL) spectra, their power and temperature dependences have been studied for ground (GS) and three excited states (1–3ES) in InAs QDs. By changing the excitation power density, we can significantly influence the distribution of excitons within the QD ensemble. The PL peak energy positions of GS and ES emissions bands depend on an excitation light power. With increasing excitation power, the GS emission energy was red-shifted, while the 1–3ES emission energies were blue-shifted. It is found that the full width at half maximum of the PL spectra has unusual relationship with increasing temperature from 9 to 300 K. The temperature dependence of QD PL spectra shown the existence of two stages of PL thermal quenching and two distinct activation energies corresponding to the temperature ranges I (9–100 K) and II (100–300 K).
- Subjects :
- 010302 applied physics
Photoluminescence
Materials science
Exciton
Bioengineering
02 engineering and technology
General Chemistry
Atmospheric temperature range
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
7. Clean energy
Atomic and Molecular Physics, and Optics
Full width at half maximum
Quantum dot
Modeling and Simulation
Excited state
0103 physical sciences
General Materials Science
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Atomic physics
0210 nano-technology
ComputingMilieux_MISCELLANEOUS
Power density
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 1572896X and 13880764
- Volume :
- 13
- Database :
- OpenAIRE
- Journal :
- Journal of Nanoparticle Research
- Accession number :
- edsair.doi.dedup.....5ea7df81311c40d85bc730dd054697ab