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Hot carrier degradation in nanowire transistors: Physical mechanisms, width dependence and impact of Self-Heating
- Source :
- 2016 VLSI-Technology Technical Digest, 2016 IEEE Symposium on VLSI Technology, 2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. pp.39-40, ⟨10.1109/VLSIT.2016.7573374⟩
- Publication Year :
- 2016
- Publisher :
- HAL CCSD, 2016.
-
Abstract
- session 5: Device Reliability; International audience; We present an extensive study of Hot Carrier reliability in N-Ωfet nanowires. For the first time 3 HC degradation modes were clearly evidenced as in planar technology and accurately modeled. Moreover HC reliability was proved to be width-independent. Finally it is shown that, although SH is important in nanowires, it has almost no implication on its HC reliability because of the weak temperature dependence of the HC mechanisms.
- Subjects :
- 010302 applied physics
Materials science
business.industry
020208 electrical & electronic engineering
Nanowire
Nanotechnology
02 engineering and technology
01 natural sciences
Reliability (semiconductor)
Planar
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
Degradation (geology)
Nanowire transistors
Hot carrier reliability
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
business
Self heating
Hot carrier degradation
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- 2016 VLSI-Technology Technical Digest, 2016 IEEE Symposium on VLSI Technology, 2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. pp.39-40, ⟨10.1109/VLSIT.2016.7573374⟩
- Accession number :
- edsair.doi.dedup.....5df27ded238ece8fa97e90611f34c3f2