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A Wide Dynamic Range CMOS Image Sensor with a Charge Splitting Gate and Two Storage Diodes
- Source :
- Sensors, Volume 19, Issue 13, Sensors, Vol 19, Iss 13, p 2904 (2019), Sensors (Basel, Switzerland)
- Publication Year :
- 2019
- Publisher :
- Multidisciplinary Digital Publishing Institute, 2019.
-
Abstract
- In this paper, a wide dynamic range (WDR) CMOS image sensor (CIS) with a charge splitting gate (SG) and two storage diodes (SDs) is presented. By using single-gate on/off control with the SG, photocurrent path to the first (SD1) or second storage diodes (SD2) is switched alternatively and periodically during exposure and signal electrons generated in a photodiode (PD) are transferred to and accumulated in the SD1 or SD2. By setting a large ratio of the off-time to on-time of the SG, two different sensitivity signals, which are originated by the same photodiode, are generated and a WDR image signal is obtained. This technique has a distinct advantage on mitigating the problem of motion artifact in WDR imaging with high and low sensitivity signals and flexible dynamic control of the dynamic range. An experimental WDR CMOS image sensor with 280 (H) &times<br />406 (V)-pixel array consisting of 14 sub-arrays, each of which have 20 (H) &times<br />406 (V) pixels, was implemented and tested. For the SG on/off-time ratio of 30 and 279, the DR of 93 dB and 104 dB, respectively, was demonstrated. The effect of the proposed WDR imaging operation on the reduced motion artifact was experimentally confirmed.
- Subjects :
- Materials science
charge splitting gate (SG)
02 engineering and technology
lcsh:Chemical technology
01 natural sciences
Biochemistry
Signal
Article
Analytical Chemistry
law.invention
law
0103 physical sciences
Wide dynamic range
0202 electrical engineering, electronic engineering, information engineering
lcsh:TP1-1185
Electrical and Electronic Engineering
Image sensor
storage diode
Instrumentation
high- and low-sensitivity
Diode
010302 applied physics
Photocurrent
wide dynamic range (WDR)
business.industry
Dynamic range
020208 electrical & electronic engineering
Atomic and Molecular Physics, and Optics
Photodiode
CMOS image sensor
Optoelectronics
business
Sensitivity (electronics)
Subjects
Details
- Language :
- English
- ISSN :
- 14248220
- Database :
- OpenAIRE
- Journal :
- Sensors
- Accession number :
- edsair.doi.dedup.....5d20c74ccbb1f1ac481560250801de05
- Full Text :
- https://doi.org/10.3390/s19132904