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Defect structure of Sn-doped CdTe
- Source :
- Scopus-Elsevier
- Publication Year :
- 2003
- Publisher :
- Springer Science and Business Media LLC, 2003.
-
Abstract
- A complex investigation of defect structure of high-resistivity, Sn-doped CdTe grown by vertical-gradient freeze and Bridgman methods by a number of optical, photoelectrical, and electrical methods was performed. High-resistive and photosensitive material, potentially interesting for fabrication of x- and gamma-ray detectors, was produced in 80% of the crystal volume. A model of energy levels dominating the recombination processes in the material was elaborated, where the role of Sn and Fe-related as well as native defects (Cd vacancy) is discussed.
- Subjects :
- Photoluminescence
Fabrication
Solid-state physics
business.industry
Chemistry
Stereochemistry
Doping
Condensed Matter Physics
Cadmium telluride photovoltaics
Electronic, Optical and Magnetic Materials
Crystal
Impurity
Vacancy defect
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi.dedup.....5b4336b319a9b294010a414982204043