Defect structure of Sn-doped CdTe

A complex investigation of defect structure of high-resistivity, Sn-doped CdTe grown by vertical-gradient freeze and Bridgman methods by a number of optical, photoelectrical, and electrical methods was performed. High-resistive and photosensitive material, potentially interesting for fabrication of x- and gamma-ray detectors, was produced in 80% of the crystal volume. A model of energy levels dominating the recombination processes in the material was elaborated, where the role of Sn and Fe-related as well as native defects (Cd vacancy) is discussed.