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On the direct insulator-quantum Hall transition in two-dimensional electron systems in the vicinity of nanoscaled scatterers

Authors :
Jeng-Chung Chen
Gil-Ho Kim
David A. Ritchie
Nobuyuki Aoki
Huang Chun-Feng
Shun-Tsung Lo
Chen Kuang Yoa
Chi-Te Liang
Yiping Lin
Yi Ting Wang
Dong-Sheng Lou
Sheng-Di Lin
Yuichi Ochiai
Li-Hung Lin
Chang Yuan-Huei
Ritchie, David [0000-0002-9844-8350]
Apollo - University of Cambridge Repository
Source :
Nanoscale Research Letters, Vol 6, Iss 1, p 131 (2011), Nanoscale Research Letters
Publication Year :
2011
Publisher :
Springer Science and Business Media LLC, 2011.

Abstract

A direct insulator-quantum Hall (I-QH) transition corresponds to a crossover/transition from the insulating regime to a high Landau level filling factor ν > 2 QH state. Such a transition has been attracting a great deal of both experimental and theoretical interests. In this study, we present three different two-dimensional electron systems (2DESs) which are in the vicinity of nanoscaled scatterers. All these three devices exhibit a direct I-QH transition, and the transport properties under different nanaoscaled scatterers are discussed.

Details

Language :
English
Database :
OpenAIRE
Journal :
Nanoscale Research Letters, Vol 6, Iss 1, p 131 (2011), Nanoscale Research Letters
Accession number :
edsair.doi.dedup.....5ab48951e6eba343cb0598287fdd84c4