On the Optimum Determination and Use of SiC VJFET Threshold Voltage

Authors :: Konstantinos Zekentes
Nikolaos Makris
George Konstantinidis
Maria Kayambaki
Antonis Stavrinidis
Microelectronics Research Group, IESL-FORTH, P.O. Box 1385, 71110, Heraklion, Greece
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC )
Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
Source :: Materials Science Forum, Materials Science Forum, Trans Tech Publications Inc., 2018, 924, pp.657-660. ⟨10.4028/www.scientific.net/MSF.924.657⟩
Publication Year :: 2018
Publisher :: HAL CCSD, 2018.
Abstract: The threshold voltage of SiC JFETs has been determined from transfer characteristics by employing methods commonly used in the case of MOSFETs. The extracted values have been compared with the value determined from the fitting of experimental transfer characteristics with the Schockley model equation. Moreover, the variation of the extracted threshold voltage values with respect to channel width has been employed to determine the channel concentration without taking into account the Vbi value.

Language :: English
ISSN :: 02555476 and 16629760
Database :: OpenAIRE
Journal :: Materials Science Forum, Materials Science Forum, Trans Tech Publications Inc., 2018, 924, pp.657-660. ⟨10.4028/www.scientific.net/MSF.924.657⟩
Accession number :: edsair.doi.dedup.....5a507740d72fa5ed6ec857ddee02ca3a
Full Text :: https://doi.org/10.4028/www.scientific.net/MSF.924.657⟩