Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets

Authors :: Bury, E
Chasin, A
Kaczer, B
Vandemaele, M
Tyaginov, S
Franco, J
Ritzenthaler, R
Mertens, H
Weckx, P
Horiguchi, N
Linten, D
Source :: 2022 IEEE International Reliability Physics Symposium (IRPS).
Publication Year :: 2022
Publisher :: IEEE, 2022.
Abstract: ispartof: 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) ispartof: IEEE International Reliability Physics Symposium (IRPS) location:TX, Dallas date:27 Mar - 31 Mar 2022 status: published

Subjects :: FET arrays
Technology
Science & Technology
HCD
Physics
Engineering, Multidisciplinary
Engineering, Electrical & Electronic
Nanosheet FETs
Forksheet FETs
trapping
Physics, Applied
Engineering
hot-carrier degradation
Physical Sciences
FSH
oxide defects
interface degradation
NSH

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