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Exchange Bias Effect in Ferro-/Antiferromagnetic van der Waals Heterostructures
- Source :
- Nano letters. 20(5)
- Publication Year :
- 2020
-
Abstract
- The recent discovery of magnetic van der Waals (vdW) materials provides a platform to answer fundamental questions on the two-dimensional (2D) limit of magnetic phenomena and applications. An important question in magnetism is the ultimate limit of the antiferromagnetic layer thickness in ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures to observe the exchange bias (EB) effect, of which origin has been subject to a long-standing debate. Here, we report that the EB effect is maintained down to the atomic bilayer of AFM in the FM (Fe3GeTe2)/AFM (CrPS4) vdW heterostructure, but it vanishes at the single-layer limit. Given that CrPS4 is of A-type AFM and, thus, the bilayer is the smallest unit to form an AFM, this result clearly demonstrates the 2D limit of EB; only one unit of AFM ordering is sufficient for a finite EB effect. Moreover, the semiconducting property of AFM CrPS4 allows us to electrically control the exchange bias, providing an energy-efficient knob for spintronic devices.
- Subjects :
- Materials science
Spintronics
Condensed matter physics
Magnetism
Mechanical Engineering
Bilayer
Bioengineering
02 engineering and technology
General Chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
Magnetic anisotropy
symbols.namesake
Exchange bias
Ferromagnetism
symbols
Antiferromagnetism
Condensed Matter::Strongly Correlated Electrons
General Materials Science
van der Waals force
0210 nano-technology
Subjects
Details
- ISSN :
- 15306992
- Volume :
- 20
- Issue :
- 5
- Database :
- OpenAIRE
- Journal :
- Nano letters
- Accession number :
- edsair.doi.dedup.....59f4ea786d497a2d412460b5db37914a