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Probing the local temperature by in situ electron microscopy on a heated Si(3)N(4) membrane
- Source :
- Ultramicroscopy, Ultramicroscopy, Elsevier, 2009, 110, pp.61-66, Ultramicroscopy, 2009, 110, pp.61-66
- Publication Year :
- 2008
-
Abstract
- We present a method allowing us to obtain localized heating that is compatible with high-temperature operation and real time scanning and transmission electron microscopy. Localized heating is induced by flowing current through tungsten nanowires deposited by focused ion-beam-induced deposition on a 50-nm-thick Si(3)N(4) membrane. Based on the heat transport between the nanowire and the substrate, we applied an analytical model to obtain the temperature profile as a function of electrical power. In this model, the key parameter is the thermal resistance between the nanowire and the substrate that we determined experimentally by measuring electrical power and local temperature. The local temperature is measured by observing the evaporation of gold nanoparticle by electron microscopy. These in situ heating and temperature-probing capabilities are used to study the crystallization of the Si(3)N(4) membrane and the growth of silicon nanowires.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Scanning electron microscope
Thermal resistance
Analytical chemistry
Nanowire
02 engineering and technology
Substrate (electronics)
021001 nanoscience & nanotechnology
01 natural sciences
Evaporation (deposition)
Focused ion beam
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Transmission electron microscopy
0103 physical sciences
Microscopy
Optoelectronics
0210 nano-technology
business
Instrumentation
Subjects
Details
- ISSN :
- 18792723 and 03043991
- Volume :
- 110
- Issue :
- 1
- Database :
- OpenAIRE
- Journal :
- Ultramicroscopy
- Accession number :
- edsair.doi.dedup.....57a5bc349aa757adae692f91dfcf7575