Secondary Electrons Characterization of Hydrogenated Dilute Nitrides

Dilute nitrides alloys, as GaAsxN1−x, have been extensively studied in the last few years since the presence of small amounts of N in III–V semiconductors leads to major changes in the physical properties of the host materials. In particular, the strong reduction of band gap induced by N enables important technological applications in the field of active optical devices and microelectronics.