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Enhancing chaotic behavior at room temperature in GaAs/(Al,Ga)As superlattices
- Source :
- e-Archivo. Repositorio Institucional de la Universidad Carlos III de Madrid, instname, e-Archivo: Repositorio Institucional de la Universidad Carlos III de Madrid, Universidad Carlos III de Madrid (UC3M)
- Publication Year :
- 2017
- Publisher :
- American Physical Society, 2017.
-
Abstract
- Previous theoretical and experimental work has put forward 50-period semiconductor superlattices as fast, true random number generators at room temperature. Their randomness stems from feedback between nonlinear electronic dynamics and stochastic processes that are intrinsic to quantum transitions. This work theoretically demonstrates that shorter superlattices with higher potential barriers contain fully chaotic dynamics over several intervals of the applied bias voltage compared to the 50-periods device which presented a much weaker chaotic behavior. The chaos arises from deterministic dynamics, hence it persists even in the absence of additional stochastic processes. Moreover, the frequency of the chaotic current oscillations is higher for shorter superlattices. These features should allow for faster and more robust generation of true random numbers.<br />12 pages, 4 figures
- Subjects :
- Physics
Condensed Matter - Mesoscale and Nanoscale Physics
Random number generation
Stochastic process
Matemáticas
Superlattice
Chaotic
FOS: Physical sciences
Biasing
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Nonlinear system
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
0103 physical sciences
Statistical physics
010306 general physics
0210 nano-technology
Quantum
Randomness
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- e-Archivo. Repositorio Institucional de la Universidad Carlos III de Madrid, instname, e-Archivo: Repositorio Institucional de la Universidad Carlos III de Madrid, Universidad Carlos III de Madrid (UC3M)
- Accession number :
- edsair.doi.dedup.....5684f5553d7b6bea8ed83b6e21bed1ce
- Full Text :
- https://doi.org/10.1103/PhysRevB.95.085204