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Characterization of Integrated Nano Materials

Authors :
Amal Chabli
Peter Cherns
Nicolas Chevalier
David Cooper
Dominique Lafond
François Bertin
Henri Blanc
Ariel Brenac
Philippe Andreucci
Jean-Christophe Gabriel
Erik M. Secula
David G. Seiler
Rajinder P. Khosla
Dan Herr
C. Michael Garner
Robert McDonald
Alain C. Diebold
Minatec Grenoble (CEA/ INP Grenoble)
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI)
Direction de Recherche Technologique (CEA) (DRT (CEA))
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
This work was supported by the French National Research Agency (ANR) through the Carnot fundingand the Basic Technological Research Program.
David G. Seiler
Alain C. Diebold
Robert McDonald
C. Michael Garner
Dan Herr
Rajinder P. Khosla
Erik M. Secula
ANR-06-CARN-0011-01,Carnot LETI
ANR-06-CARN-0011-01,LETI,LETI(2006)
Source :
Frontiers of Characterization and Metrology for Nanoelectronics. AIP, 2009, 2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, 2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, May 2009, Albany, New York, United States. pp.12-20, ⟨10.1063/1.3251207⟩, ResearcherID
Publication Year :
2009
Publisher :
HAL CCSD, 2009.

Abstract

International audience; Depending on the level of the technological developments, the characterization techniques are mature tosupport them or still require protocol definition and relevance demonstration for the issues addressed. For BeyondCMOS and Extreme CMOS devices, the integration of nano-objects like nanowires and carbon nanotubes, brings aboutanalysis requirements that are at the frontier of the state-of-the-art characterization techniques. The specific limitationsof the use of the existing physical and chemical characterization techniques for integrated nanomaterials are highlighted.In the case of Scanning Probe Microscopy, in-situ localization and positioning are specifically challenging and dataanalysis is mainly statistical. It is also shown how specific sample preparation may serve the extraction of the required3D information in particular for Electron Microscopy. The measurement developments related to NEMS technologiesguided by the need for dynamic characterization of these components are covered too.

Details

Language :
English
Database :
OpenAIRE
Journal :
Frontiers of Characterization and Metrology for Nanoelectronics. AIP, 2009, 2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, 2009 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, May 2009, Albany, New York, United States. pp.12-20, ⟨10.1063/1.3251207⟩, ResearcherID
Accession number :
edsair.doi.dedup.....56834d9add8aebf5479754f426c6258f