Back to Search
Start Over
Gate-last integration on planar FDSOI for low-VTp and low-EOT MOSFETs
- Source :
- Microelectronic Engineering, Microelectronic Engineering, Elsevier, 2013, 109, pp.306-309. ⟨10.1016/j.mee.2013.03.045⟩, Microelectronic Engineering, 2013, 109, pp.306-309. ⟨10.1016/j.mee.2013.03.045⟩
- Publication Year :
- 2013
- Publisher :
- HAL CCSD, 2013.
-
Abstract
- Graphical abstractDisplay Omitted We integrated a gate-last on high-k first on planar fully depleted SOI MOSFETs.pMOSFETs reach a low threshold voltage of VTp=-0.2V.Gate-last pMOSFETS present one decade gate current gain compared to gate first ones.The use of a TiN MOCVD capping decreases the EWF by 0.2eV and degrades the reliability compared to TiN ALD.EOT down to 0.8nm with midgap TaN are obtained on HfO2 in a high-k last integration. We integrated planar fully depleted (FD) SOI MOSFETs with a gate-last on high-k first (GL-HKF) down to gate lengths of Lg=15nm and active widths of W=80nm. Such an integration scheme enables reaching for pMOSFETs a threshold voltage of VTp=-0.2V and one decade gate current (JG) gain, as well as similar hole mobility and ON-currents, compared to pMOSFETs integrated with a gate first. This approach is also benchmarked with high-k last (GL-HKL) stacks in terms of leakage, equivalent oxide thickness (EOT), effective work-function (EWF) and flat band voltage (VFB) shift under stress.
- Subjects :
- 010302 applied physics
Electron mobility
Materials science
business.industry
Silicon on insulator
Time-dependent gate oxide breakdown
Equivalent oxide thickness
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Threshold voltage
Gate oxide
0103 physical sciences
MOSFET
Optoelectronics
Electrical and Electronic Engineering
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
0210 nano-technology
business
ComputingMilieux_MISCELLANEOUS
Leakage (electronics)
Subjects
Details
- Language :
- English
- ISSN :
- 01679317 and 18735568
- Database :
- OpenAIRE
- Journal :
- Microelectronic Engineering, Microelectronic Engineering, Elsevier, 2013, 109, pp.306-309. ⟨10.1016/j.mee.2013.03.045⟩, Microelectronic Engineering, 2013, 109, pp.306-309. ⟨10.1016/j.mee.2013.03.045⟩
- Accession number :
- edsair.doi.dedup.....55f688bcbb398063cfd6caffbf58fdf0
- Full Text :
- https://doi.org/10.1016/j.mee.2013.03.045⟩