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InP Membrane on Silicon (IMOS) Photonics
- Source :
- IEEE Journal of Quantum Electronics, IEEE Journal of Quantum Electronics, 56(1):6300107, 1-7. Institute of Electrical and Electronics Engineers
- Publication Year :
- 2020
-
Abstract
- InP membranes have appeared in the last decade as a viable integrated photonics platform, suitable for adding photonic functions to silicon electronics. It combines the strengths of silicon photonics (high index contrasts and therefore small footprint devices) with those of generic InP-platforms (monolithic integration of active and passive devices). A range of functionalities has been developed on this platform, which goes by the name of Indium phosphide membrane on silicon (IMOS). Competitive performances have been demonstrated for lasers, fast detectors, waveguides, filters, couplers, modulators, and more. Here, we provide an overview of IMOS and describe recent developments regarding technology and devices. This includes record low propagation losses, plasmonic waveguides, a variety of laser structures, and improved wavelength demuliplexers. These developments demonstrate that IMOS has potential to deliver photonic integrated circuits to a wide variety of application fields, e.g. telecom, datacom, sensing, terahertz, and many others.
- Subjects :
- Materials science
Silicon
Terahertz radiation
chemistry.chemical_element
02 engineering and technology
Indium phosphide
7. Clean energy
law.invention
chemistry.chemical_compound
020210 optoelectronics & photonics
law
0202 electrical engineering, electronic engineering, information engineering
Electronics
Electrical and Electronic Engineering
Silicon photonics
business.industry
Photonic integrated circuit
waveguides
Condensed Matter Physics
Laser
Atomic and Molecular Physics, and Optics
chemistry
membranes
photonic integration
Optoelectronics
Photonics
business
lasers
Subjects
Details
- ISSN :
- 00189197
- Database :
- OpenAIRE
- Journal :
- IEEE Journal of Quantum Electronics
- Accession number :
- edsair.doi.dedup.....556c9b8857d3bec12dc72675899962b2
- Full Text :
- https://doi.org/10.1109/jqe.2019.2953296