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InP Membrane on Silicon (IMOS) Photonics

Authors :
Yuqing Jiao
Jos J. G. M. van der Tol
Kevin A. Williams
Jorn P. van Engelen
A. A. Kashi
Vadim Pogoretskiy
Photonic Integration
Source :
IEEE Journal of Quantum Electronics, IEEE Journal of Quantum Electronics, 56(1):6300107, 1-7. Institute of Electrical and Electronics Engineers
Publication Year :
2020

Abstract

InP membranes have appeared in the last decade as a viable integrated photonics platform, suitable for adding photonic functions to silicon electronics. It combines the strengths of silicon photonics (high index contrasts and therefore small footprint devices) with those of generic InP-platforms (monolithic integration of active and passive devices). A range of functionalities has been developed on this platform, which goes by the name of Indium phosphide membrane on silicon (IMOS). Competitive performances have been demonstrated for lasers, fast detectors, waveguides, filters, couplers, modulators, and more. Here, we provide an overview of IMOS and describe recent developments regarding technology and devices. This includes record low propagation losses, plasmonic waveguides, a variety of laser structures, and improved wavelength demuliplexers. These developments demonstrate that IMOS has potential to deliver photonic integrated circuits to a wide variety of application fields, e.g. telecom, datacom, sensing, terahertz, and many others.

Details

ISSN :
00189197
Database :
OpenAIRE
Journal :
IEEE Journal of Quantum Electronics
Accession number :
edsair.doi.dedup.....556c9b8857d3bec12dc72675899962b2
Full Text :
https://doi.org/10.1109/jqe.2019.2953296