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Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks

Authors :
Miranda, Enrique Alberto
Falbo, P.
Nafría i Maqueda, Montserrat
Crupi, F.
American Physical Society
Source :
Recercat. Dipósit de la Recerca de Catalunya, instname, Recercat: Dipósit de la Recerca de Catalunya, Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya), Dipòsit Digital de Documents de la UAB, Universitat Autònoma de Barcelona
Publication Year :
2021

Abstract

A microscopic picture for the progressive leakage current growth in electrically stressed HfxSi1−xON∕SiON gate stacks in metal-oxide-semiconductor transistors based on the physics of mesoscopic conductors is proposed. The breakdown spot is modeled as a nanoconstriction connecting two electron reservoirs. We show that after eliminating the tunneling current component that flows through the nondamaged device area, the postbreakdown conductance exhibits levels of the order of the quantum unit 2e2∕h, where e is the electron charge and h the Planck’s constant, as is expected for atomic-sized contacts. Similarities and differences with previous studied systems are discussed.

Details

Database :
OpenAIRE
Journal :
Recercat. Dipósit de la Recerca de Catalunya, instname, Recercat: Dipósit de la Recerca de Catalunya, Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya), Dipòsit Digital de Documents de la UAB, Universitat Autònoma de Barcelona
Accession number :
edsair.doi.dedup.....5555e0468e5ea0d67cc7610db46838f3