A fully CAD consistent model of MESFETs and HEMTs

An empirical large-signal model of MESFETs and HEMTs has been developed which ensures the full charge conservation, numerical stability and small-signal consistency during computer-aided simulations. For a maximum of accuracy, the charges are directly extracted from the raw gradient experimental data and represented by optimized polynomial functions. The model is valid in reverse operation of the device too. It has been verified for a 0.5 un gate length, 2 x 50 um and 4 x 50 um gate width PHEMTs and implemented into the Hewlett-Packard's MDS software.