I-V characteristics of polycrystalline silicon resistors

Authors :: G. Baccarani
M. Impronta
P. Ferla
Bruno Ricco
Source :: Revue de Physique Appliquée, Revue de Physique Appliquée, Société française de physique / EDP, 1978, 13 (12), pp.777-782. ⟨10.1051/rphysap:019780013012077700⟩
Publication Year :: 1978
Publisher :: HAL CCSD, 1978.
Abstract: The electrical properties of polycrystalline silicon resistors in the non-linear regime are examined. The adopted model is based on a thermionic-diffusion transport mechanism, and assumes charge trapping at the grain boundary. The theory closely fits experimental I-V characteristics, and allows for the determination of the average grain size.

Subjects :: Semiconductor thin films
thermionic diffusion transport mechanism
Materials science
Silicon
average grain size
semiconductor device
Physics::Instrumentation and Detectors
charge trapping
chemistry.chemical_element
02 engineering and technology
engineering.material
01 natural sciences
law.invention
Monocrystalline silicon
law
electron traps
0103 physical sciences
Electronic engineering
010302 applied physics
polycrystalline Si resistors
business.industry
silicon
grain boundaries
Semiconductor device
021001 nanoscience & nanotechnology
Polycrystalline silicon
chemistry
grain boundary
[PHYS.HIST]Physics [physics]/Physics archives
engineering
high field effects
I V characteristics
Optoelectronics
Grain boundary
semiconductor thin films
Resistor
elemental semiconductors
0210 nano-technology
business
nonlinear regime

Language :: English
ISSN :: 00351687 and 27773671
Database :: OpenAIRE
Journal :: Revue de Physique Appliquée, Revue de Physique Appliquée, Société française de physique / EDP, 1978, 13 (12), pp.777-782. ⟨10.1051/rphysap:019780013012077700⟩
Accession number :: edsair.doi.dedup.....5456a4c0f8d9f6df9e57e6aaa2707a29
Full Text :: https://doi.org/10.1051/rphysap:019780013012077700⟩