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Conductance fluctuations in Si nanowires studied from first-principles
- Source :
- Journal of applied physics (online) 116 (2014). doi:10.1063/1.4892673, info:cnr-pdr/source/autori:Iori F.; Ossicini S.; Rurali R./titolo:Conductance fluctuations in Si nanowires studied from first-principles/doi:10.1063%2F1.4892673/rivista:Journal of applied physics (online)/anno:2014/pagina_da:/pagina_a:/intervallo_pagine:/volume:116
- Publication Year :
- 2014
- Publisher :
- American Institute of Physics, Melville, NY , Stati Uniti d'America, 2014.
-
Abstract
- We study how the variability of the conductance associated with single-dopant configurations affects the overall conductivity of long, realistic ultrathin Si nanowires (NW). We calculate the resistance associated with each single-dopant configuration from density-functional theory (DFT) calculations and we sum them up classically to obtain the resistance of the long wire. This allows to identify limiting factors for the performance of Si NWs based devices. © 2014 AIP Publishing LLC.
- Subjects :
- Materials science
Ab initio methods
Silicon
Condensed matter physics
Nanowire
General Physics and Astronomy
chemistry.chemical_element
Conductance
Conductivity
Electron transport chain
chemistry
Ab initio quantum chemistry methods
Electrical resistivity and conductivity
silicon nanostructures
electron transport
Density functional theory
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Journal of applied physics (online) 116 (2014). doi:10.1063/1.4892673, info:cnr-pdr/source/autori:Iori F.; Ossicini S.; Rurali R./titolo:Conductance fluctuations in Si nanowires studied from first-principles/doi:10.1063%2F1.4892673/rivista:Journal of applied physics (online)/anno:2014/pagina_da:/pagina_a:/intervallo_pagine:/volume:116
- Accession number :
- edsair.doi.dedup.....544e059c805178a86d2f03f7b0c3a0fb
- Full Text :
- https://doi.org/10.1063/1.4892673