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Electric-Field-Dependent Spin Polarization in GdN Spin Filter Tunnel Junctions

Authors :
Zoe H. Barber
Avradeep Pal
Kartik Senapati
Mark G. Blamire
Source :
Advanced Materials
Publication Year :
2013

Abstract

Tunnel junctions incorporating GdN ferromagnetic semiconductor barriers show a spin polarization exceeding 90% and a high conductance. These devices show an unusual low-bias conductance peak arising from a strong bias-dependence of the spin polarization. This originates from a strong magneto-electric coupling within a double Schottky barrier formed with the NbN electrodes.

Details

Language :
English
ISSN :
09359648
Database :
OpenAIRE
Journal :
Advanced Materials
Accession number :
edsair.doi.dedup.....51639f6c3510150c8fda20932babfe4f
Full Text :
https://doi.org/10.1002/adma.201300636