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Electric-Field-Dependent Spin Polarization in GdN Spin Filter Tunnel Junctions
- Source :
- Advanced Materials
- Publication Year :
- 2013
-
Abstract
- Tunnel junctions incorporating GdN ferromagnetic semiconductor barriers show a spin polarization exceeding 90% and a high conductance. These devices show an unusual low-bias conductance peak arising from a strong bias-dependence of the spin polarization. This originates from a strong magneto-electric coupling within a double Schottky barrier formed with the NbN electrodes.
- Subjects :
- Materials science
Condensed matter physics
Spin polarization
Mechanical Engineering
Schottky barrier
Ferromagnetic semiconductor
Conductance
02 engineering and technology
Spin filter
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
01 natural sciences
Coupling (electronics)
Condensed Matter::Materials Science
Mechanics of Materials
Condensed Matter::Superconductivity
Electric field
0103 physical sciences
Electrode
General Materials Science
010306 general physics
0210 nano-technology
Subjects
Details
- Language :
- English
- ISSN :
- 09359648
- Database :
- OpenAIRE
- Journal :
- Advanced Materials
- Accession number :
- edsair.doi.dedup.....51639f6c3510150c8fda20932babfe4f
- Full Text :
- https://doi.org/10.1002/adma.201300636